Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Kingmax Semiconductor GSAH22F-18---------- 16GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

Kingmax Semiconductor GSAH22F-18---------- 16GB

需要考虑的原因
Kingmax Semiconductor GSAH22F-18---------- 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

15.3 14

测试中的平均数值
更快的写入速度，GB/s

12.7 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

14.0 15.3
写入速度，GB/s

9.2 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2356 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston XRGM6C-MIB 16GB

Kingston XRGM6C-MIB 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Crucial Technology BL16G32C16U4BL.M8FB1 16GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Essencore Limited KD48GS481-26N1600 8GB

Essencore Limited KD48GS481-26N1600 8GB