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Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2133C15-4GIS 4GB
比较
Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-2133C15-4GIS 4GB
总分
Peak Electronics 256X64M-67E 2GB
总分
G Skill Intl F4-2133C15-4GIS 4GB
差异
规格
评论
差异
需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
更快的读取速度,GB/s
5
15.6
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2133C15-4GIS 4GB
报告一个错误
低于PassMark测试中的延时,ns
33
39
左右 -18% 更低的延时
更快的写入速度,GB/s
11.5
1,597.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2133C15-4GIS 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
39
33
读取速度,GB/s
5,022.9
15.6
写入速度,GB/s
1,597.0
11.5
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
753
2562
Peak Electronics 256X64M-67E 2GB RAM的比较
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
G Skill Intl F4-2133C15-4GIS 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMW64GX4M4E3200C16 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Corsair CMK16GX4M2B3200C14 8GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M391A2K43BB1-CRC 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-4000C18-8GVK 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2133C15-4GIS 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CM4X16GE2400C16S4 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3340MB88HBF-3200 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMT64GX4M4K3600C18 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905700-097.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
报告一个错误
×
Bug description
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