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Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2933C16-8GFX 8GB

Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-2933C16-8GFX 8GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
G Skill Intl F4-2933C16-8GFX 8GB

G Skill Intl F4-2933C16-8GFX 8GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 17.4
    测试中的平均数值
G Skill Intl F4-2933C16-8GFX 8GB 需要考虑的原因
G Skill Intl F4-2933C16-8GFX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 39
    左右 -8% 更低的延时
  • 更快的写入速度，GB/s
    12.4 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2933C16-8GFX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 36
  • 读取速度，GB/s
    5,022.9 left arrow 17.4
  • 写入速度，GB/s
    1,597.0 left arrow 12.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    753 left arrow 3552

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

G Skill Intl F4-2933C16-8GFX 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
G Skill Intl F4-2800C16-4GRK 4GB
G Skill Intl F4-2800C16-4GRK 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMK16GX4M4A2400C14 4GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 9905704-007.A00G 4GB
Kingston 9905704-007.A00G 4GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMR32GX4M2D3000C16 16GB
Corsair CMR32GX4M2D3000C16 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM