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Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4266C19-8GTRG 8GB
比较
Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-4266C19-8GTRG 8GB
总分
Peak Electronics 256X64M-67E 2GB
总分
G Skill Intl F4-4266C19-8GTRG 8GB
差异
规格
评论
差异
需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
更快的读取速度,GB/s
5
20.1
测试中的平均数值
需要考虑的原因
G Skill Intl F4-4266C19-8GTRG 8GB
报告一个错误
低于PassMark测试中的延时,ns
20
39
左右 -95% 更低的延时
更快的写入速度,GB/s
19.3
1,597.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4266C19-8GTRG 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
39
20
读取速度,GB/s
5,022.9
20.1
写入速度,GB/s
1,597.0
19.3
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
753
4215
Peak Electronics 256X64M-67E 2GB RAM的比较
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
G Skill Intl F4-4266C19-8GTRG 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R538G1601U2S 8GB
Samsung M378A1K43BB1-CRC 8GB
Crucial Technology CT102464BF160B-16F 8GB
DSL Memory CIR-W4SUSS2408G 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4266C19-8GTRG 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9965669-031.A00G 16GB
Samsung M393B1K70CH0-CH9 8GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Kingston 9905458-017.A01LF 4GB
SK Hynix HMA81GS6CJR8N-XN 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-YK0 4GB
Crucial Technology CT25664BA160B.C16F 2GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Corsair CMY8GX3M2A2133C8 4GB
G Skill Intl F4-3000C15-8GRKB 8GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-2400C15-16GTZRX 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M391A1G43EB1-CPB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMR16GX4M2C3600C18 8GB
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
报告一个错误
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