Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-4266C19-8GTRS 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 19.6

测试中的平均数值

G Skill Intl F4-4266C19-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 -70% 更低的延时
更快的写入速度，GB/s

17.6 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-4266C19-8GTRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 23
读取速度，GB/s

5,022.9 19.6
写入速度，GB/s

1,597.0 17.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 4100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4S240FSD.16FBD2 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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AMD AE34G1601U1 4GB

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Mushkin MR[A/B]4U280HHHH8G 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-4266C19-8GTRS 8GB

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AMD R538G1601U2S 8GB

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Micron Technology 9ASF1G72PZ-2G3A1 8GB

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Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

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Samsung M378B5673EH1-CF8 2GB

Kingston 9905700-011.A00G 8GB

Kingston 9905700-011.A00G 8GB

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Team Group Inc. TEAMGROUP-SD4-2133 8GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB