Peak Electronics 256X64M-67E 2GB vs Kingston 9905624-004.A00G 4GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Kingston 9905624-004.A00G 4GB

Kingston 9905624-004.A00G 4GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 16.3

测试中的平均数值

Kingston 9905624-004.A00G 4GB

需要考虑的原因
Kingston 9905624-004.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 -70% 更低的延时
更快的写入速度，GB/s

12.0 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Kingston 9905624-004.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 23
读取速度，GB/s

5,022.9 16.3
写入速度，GB/s

1,597.0 12.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

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Samsung M378B5773DH0-CH9 2GB

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Micron Technology 36ASF4G72PZ-2G6D1 32GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Apacer Technology 78.D2GF2.4010B 16GB

Apacer Technology 78.D2GF2.4010B 16GB

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G Skill Intl F3-17000CL11-4GBXL 4GB

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