Peak Electronics 256X64M-67E 2GB vs Kingston XRGM6C-MIB 16GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Kingston XRGM6C-MIB 16GB

Kingston XRGM6C-MIB 16GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 16.5

测试中的平均数值

Kingston XRGM6C-MIB 16GB

需要考虑的原因
Kingston XRGM6C-MIB 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的写入速度，GB/s

12.5 1,597.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Kingston XRGM6C-MIB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

5,022.9 16.5
写入速度，GB/s

1,597.0 12.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

753 3083

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT41GS6BFR8A-PB 8GB

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G Skill Intl F4-3466C16-8GVK 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

Kingston 99U5471-020.A00LF 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB