Peak Electronics 256X64M-67E 2GB vs Kllisre D4 8G 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 47

左右 17% 更低的延时
更快的读取速度，GB/s

5 11.7

测试中的平均数值

Kllisre D4 8G 8GB

需要考虑的原因
Kllisre D4 8G 8GB

报告一个错误

更快的写入速度，GB/s

6.7 1,597.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Kllisre D4 8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 47
读取速度，GB/s

5,022.9 11.7
写入速度，GB/s

1,597.0 6.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

753 2143

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-028.A00LF 4GB

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Panram International Corporation D4N2666PS-16G 16GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT8G4SFS824A.M8FH 8GB

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Mushkin 991586 2GB

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A-DATA Technology AO2P21FC4R1-BRFS 4GB

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Solarflare Communications CT16G4DFD824A.C16FBR 16GB

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Samsung M393B5270CH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

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Kingston KVR16N11/8-SP 8GB

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Kingston XJV223-MIE-NX 16GB

Hexon Technology Pte Ltd HEXON 1GB

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Kingston KF3600C18D4/32GX 32GB

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Hexon Technology Pte Ltd HEXON 1GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB

Micron Technology 8ATF1G64HZ-2G2G1 8GB