Peak Electronics 256X64M-67E 2GB vs Micron Technology 36ASF4G72PZ-2G1B1 32GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Micron Technology 36ASF4G72PZ-2G1B1 32GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 11.1

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G1B1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1B1 32GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的写入速度，GB/s

6.9 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

5,022.9 11.1
写入速度，GB/s

1,597.0 6.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 2238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K1KBB1-CRC 8GB

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Crucial Technology CT102464BF160B.C16 8GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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G Skill Intl F4-3600C19-8GTZRB 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Transcend Information TS1GLH64V1H 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston ACR24D4S7D8MB-16 16GB

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AMD R534G1601U1S-UO 4GB

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Corsair CMD16GX4M4B3200C16 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

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Samsung M391A1G43DB0-CPB 8GB

Samsung M391A1G43DB0-CPB 8GB