Peak Electronics 256X64M-67E 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 56

左右 30% 更低的延时
更快的读取速度，GB/s

5 20.1

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

报告一个错误

更快的写入速度，GB/s

10.5 1,597.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 56
读取速度，GB/s

5,022.9 20.1
写入速度，GB/s

1,597.0 10.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

753 2455

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMK32GX4M4B3733C17 8GB

Corsair CMK32GX4M4B3733C17 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Kingston 9905474-019.A00LF 2GB

Kingston 9905474-019.A00LF 2GB

Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Corsair CMK32GX4M4B3733C17 8GB

Corsair CMK32GX4M4B3733C17 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Avant Technology J642GU42J9266N2 16GB

Avant Technology J642GU42J9266N2 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Apacer Technology 78.CAGPP.ARW0B 8GB

Apacer Technology 78.CAGPP.ARW0B 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Ramaxel Technology RMSA3260ME78HAF-2666 8GB

Ramaxel Technology RMSA3260ME78HAF-2666 8GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB