Peak Electronics 256X64M-67E 2GB vs SK Hynix HMA82GU6MFR8N-TF 16GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 13.9

测试中的平均数值

SK Hynix HMA82GU6MFR8N-TF 16GB

需要考虑的原因
SK Hynix HMA82GU6MFR8N-TF 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的写入速度，GB/s

8.5 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

SK Hynix HMA82GU6MFR8N-TF 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

5,022.9 13.9
写入速度，GB/s

1,597.0 8.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston XG9XKG-MIE 16GB

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Peak Electronics 256X64M-67E 2GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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AMD R5316G1609U2K 8GB

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Micron Technology 4ATS1G64HZ-2G3B1 8GB

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Kingston KHX1600C9D3/4GX 4GB

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Crucial Technology CT16G4DFD8266.C16FJ 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Corsair CMK128GX4M8X3800C19 16GB

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Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Corsair CMW32GX4M4C3200C16 8GB

Corsair CMW32GX4M4C3200C16 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

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Corsair CMK8GX4M2B3600C18 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB