Protocol Engines Kingrock 800 2GB 2GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

总分

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

总分

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

差异规格评论

差异

Protocol Engines Kingrock 800 2GB 2GB

需要考虑的原因
Protocol Engines Kingrock 800 2GB 2GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 51

左右 -96% 更低的延时
更快的写入速度，GB/s

10.2 1,832.2

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Protocol Engines Kingrock 800 2GB 2GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 26
读取速度，GB/s

4,433.3 15.5
写入速度，GB/s

1,832.2 10.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

646 2486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston KHX3333C16D4/16GX 16GB

Kingston KHX3333C16D4/16GX 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Kingston 9905701-003.A00G 16GB

Kingston 9905701-003.A00G 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

V-Color Technology Inc. TA48G36S818BNK 8GB

V-Color Technology Inc. TA48G36S818BNK 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB