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Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT8G4DFS824A.M8FB 8GB

Qimonda 64T128020EDL2.5C2 1GB vs Crucial Technology CT8G4DFS824A.M8FB 8GB

总分
star star star star star
Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

总分
star star star star star
Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

差异 规格 评论

差异

Qimonda 64T128020EDL2.5C2 1GB 需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.1
    测试中的平均数值
Crucial Technology CT8G4DFS824A.M8FB 8GB 需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 79
    左右 -193% 更低的延时
  • 更快的写入速度，GB/s
    13.2 left arrow 1,468.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    79 left arrow 27
  • 读取速度，GB/s
    3,061.8 left arrow 17.1
  • 写入速度，GB/s
    1,468.1 left arrow 13.2
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    422 left arrow 3237

Qimonda 64T128020EDL2.5C2 1GB RAM的比较

Micron Technology 8HTF12864HDY-800G1 1GB
G Skill Intl F4-2666C18-8GFX 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Samsung M378A2K43CB1-CRC 16GB
Samsung M378A2K43CB1-CRC 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
V-GEN D4M8GL26A8TS6 8GB
V-GEN D4M8GL26A8TS6 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMG16GX4M2E3200C16 8GB
Corsair CMG16GX4M2E3200C16 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Panram International Corporation W4U2666P-8G 8GB
Panram International Corporation W4U2666P-8G 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMR64GX4M4C3333C16 16GB
Corsair CMR64GX4M4C3333C16 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMW32GX4M4K4266C19 8GB
Corsair CMW32GX4M4K4266C19 8GB
内存RAM