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Qimonda 64T128020EDL2.5C2 1GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
比较
Qimonda 64T128020EDL2.5C2 1GB vs Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
总分
Qimonda 64T128020EDL2.5C2 1GB
总分
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
差异
规格
评论
差异
需要考虑的原因
Qimonda 64T128020EDL2.5C2 1GB
报告一个错误
更快的读取速度,GB/s
3
14.4
测试中的平均数值
需要考虑的原因
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
79
左右 -182% 更低的延时
更快的写入速度,GB/s
7.5
1,468.1
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Qimonda 64T128020EDL2.5C2 1GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
79
28
读取速度,GB/s
3,061.8
14.4
写入速度,GB/s
1,468.1
7.5
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
422
2690
Qimonda 64T128020EDL2.5C2 1GB RAM的比较
Micron Technology 8HTF12864HDY-800G1 1GB
G Skill Intl F4-2666C18-8GFX 8GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905584-016.A00LF 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471A1K43CB1-CTD 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 9905678-023.A00G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Samsung M393B1K70CH0-YH9 8GB
Apacer Technology 78.CAGP7.DFW0C 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT25664AC800.K16F 2GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology BL16G26C16U4B.16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G213381 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3600C18-8GTRS 8GB
Kingston KVR800D2N6/2G 2GB
Samsung M471A1K43CB1-CTD 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905734-063.A00G 32GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
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