Qimonda 72T128420EFA3SB2 1GB vs Corsair CMD16GX4M2B3733C17 8GB

总分

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分

Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB

差异规格评论

差异

Qimonda 72T128420EFA3SB2 1GB

需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB

报告一个错误

更快的读取速度，GB/s

3 17.2

测试中的平均数值
更快的写入速度，GB/s

2,069.2 12.4

测试中的平均数值

Corsair CMD16GX4M2B3733C17 8GB

需要考虑的原因
Corsair CMD16GX4M2B3733C17 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 106

左右 -342% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Qimonda 72T128420EFA3SB2 1GB

Corsair CMD16GX4M2B3733C17 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

106 24
读取速度，GB/s

3,273.7 17.2
写入速度，GB/s

2,069.2 12.4
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

734 3204

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

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A-DATA Technology AO1P24HC8T1-BSFS 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology BLS16G4D26BFSE.16FBD 16GB

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Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Kingston 9965604-016.C01G 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB