Qimonda 72T128420EFA3SB2 1GB vs Neo Forza NMUD480E82-2666 8GB

总分

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分

Neo Forza NMUD480E82-2666 8GB

Neo Forza NMUD480E82-2666 8GB

差异规格评论

差异

Qimonda 72T128420EFA3SB2 1GB

需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值
更快的写入速度，GB/s

2,069.2 13.4

测试中的平均数值

Neo Forza NMUD480E82-2666 8GB

需要考虑的原因
Neo Forza NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 106

左右 -242% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Qimonda 72T128420EFA3SB2 1GB

Neo Forza NMUD480E82-2666 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

106 31
读取速度，GB/s

3,273.7 16.8
写入速度，GB/s

2,069.2 13.4
内存带宽，mbps

5300 21300

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

734 3239

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Neo Forza NMUD480E82-2666 8GB

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Samsung M471B5173QH0-YK0 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CMK16GX4M4A2400C16 4GB

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Kingston KHX3200C18D4/8G 8GB

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Kingston KHX2666C13D4/8GX 8GB

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Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

INTENSO 5641160 8GB

INTENSO 5641160 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMD16GX4M4A2800C16 4GB

Corsair CMD16GX4M4A2800C16 4GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

G Skill Intl F4-3000C16-16GRS 16GB

G Skill Intl F4-3000C16-16GRS 16GB