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Qimonda 72T128420EFA3SB2 1GB
Panram International Corporation W4N2400PS-8G 8GB

Qimonda 72T128420EFA3SB2 1GB vs Panram International Corporation W4N2400PS-8G 8GB

总分
star star star star star
Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分
star star star star star
Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

差异 规格 评论

差异

Qimonda 72T128420EFA3SB2 1GB 需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,069.2 left arrow 12.9
    测试中的平均数值
Panram International Corporation W4N2400PS-8G 8GB 需要考虑的原因
Panram International Corporation W4N2400PS-8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 106
    左右 -361% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Qimonda 72T128420EFA3SB2 1GB
Panram International Corporation W4N2400PS-8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    106 left arrow 23
  • 读取速度，GB/s
    3,273.7 left arrow 16.6
  • 写入速度，GB/s
    2,069.2 left arrow 12.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    734 left arrow 2825

Qimonda 72T128420EFA3SB2 1GB RAM的比较

Qimonda 72T128401EFA3SC2 512MB
Kingston KP6FH5-MIE 32GB

Panram International Corporation W4N2400PS-8G 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Panram International Corporation W4N2400PS-8G 8GB
Panram International Corporation W4N2400PS-8G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMH16GX4M2Z3600C18 8GB
Corsair CMH16GX4M2Z3600C18 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
SK Hynix HMA425S6BJR6N-UH 2GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9965698-001.A00G 16GB
Kingston 9965698-001.A00G 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston HP26D4S9D8MJ-16 16GB
Kingston HP26D4S9D8MJ-16 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Avant Technology W641GU42J7240NB 8GB
Avant Technology W641GU42J7240NB 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
内存RAM