Ramaxel Technology RMR5030ME68F9F1600 4GB vs G Skill Intl F4-2400C17-16GIS 16GB

总分

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

总分

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

差异规格评论

差异

Ramaxel Technology RMR5030ME68F9F1600 4GB

需要考虑的原因
Ramaxel Technology RMR5030ME68F9F1600 4GB

报告一个错误

G Skill Intl F4-2400C17-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 42

左右 -35% 更低的延时
更快的读取速度，GB/s

16.7 13.2

测试中的平均数值
更快的写入速度，GB/s

9.8 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5030ME68F9F1600 4GB

G Skill Intl F4-2400C17-16GIS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 31
读取速度，GB/s

13.2 16.7
写入速度，GB/s

7.8 9.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2001 2888

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFRA266.C8FB 16GB

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Crucial Technology BL16G36C16U4BL.M8FB1 16GB

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Samsung M471A1A43DB0-CPB 8GB

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Kingston K1N7HK-ELC 2GB

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SK Hynix HMA82GR7MFR8N-UH 16GB

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Samsung M471B1G73QH0-YK0 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Essencore Limited IM48GU88N21-FFFHM 8GB

Essencore Limited IM48GU88N21-FFFHM 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N