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Ramaxel Technology RMR5030MM58E8F1600 2GB
Avant Technology J641GU48J5213NG 8GB

Ramaxel Technology RMR5030MM58E8F1600 2GB vs Avant Technology J641GU48J5213NG 8GB

总分
star star star star star
Ramaxel Technology RMR5030MM58E8F1600 2GB

Ramaxel Technology RMR5030MM58E8F1600 2GB

总分
star star star star star
Avant Technology J641GU48J5213NG 8GB

Avant Technology J641GU48J5213NG 8GB

差异 规格 评论

差异

Ramaxel Technology RMR5030MM58E8F1600 2GB 需要考虑的原因
Ramaxel Technology RMR5030MM58E8F1600 2GB
报告一个错误
Avant Technology J641GU48J5213NG 8GB 需要考虑的原因
Avant Technology J641GU48J5213NG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 48
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    14 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.3 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMR5030MM58E8F1600 2GB
Avant Technology J641GU48J5213NG 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    48 left arrow 28
  • 读取速度，GB/s
    9.4 left arrow 14.0
  • 写入速度，GB/s
    7.5 left arrow 10.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1601 left arrow 2310

Ramaxel Technology RMR5030MM58E8F1600 2GB RAM的比较

Kingston 99U5474-022.A00LF 2GB
Kingston KCRXJ6-HYJ 16GB

Avant Technology J641GU48J5213NG 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology VDQVE1B16 2GB
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Crucial Technology BLT4G4D26AFTA.8FBD 4GB
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内存RAM
Kingston 9905469-124.A00LF 4GB
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内存RAM
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内存RAM
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内存RAM
Kingston 9905403-444.A00LF 4GB
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Kingston KF552C40-16 16GB
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内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
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内存RAM
Samsung M393B1G70QH0-YK0 8GB
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Ramaxel Technology RMUA5180MH78HBF-2666 16GB
内存RAM
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内存RAM
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Kingston 9905471-002.A00LF 2GB
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G Skill Intl F4-4000C18-32GTZR 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Corsair CMK16GX4M2K4400C19 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
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G Skill Intl F4-4266C16-8GTZR 8GB
G Skill Intl F4-4266C16-8GTZR 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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Micron Technology CT4G4DFS8213.8FA11 4GB
内存RAM