Ramaxel Technology RMR5040ED58E9W1600 4GB vs Crucial Technology CT16G4DFRA266.C8FE 16GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Crucial Technology CT16G4DFRA266.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.C8FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

16.3 13.2

测试中的平均数值
更快的写入速度，GB/s

11.7 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

13.2 16.3
写入速度，GB/s

9.3 11.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2285 3179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M378B5673FH0-CH9 2GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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G Skill Intl F4-3600C16-8GTZNC 8GB

Samsung M471B5273EB0-CK0 4GB

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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