Ramaxel Technology RMR5040ED58E9W1600 4GB vs G Skill Intl F4-3000C14-8GVK 8GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

G Skill Intl F4-3000C14-8GVK 8GB

需要考虑的原因
G Skill Intl F4-3000C14-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 -59% 更低的延时
更快的读取速度，GB/s

17.4 13.2

测试中的平均数值
更快的写入速度，GB/s

14.1 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-3000C14-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 27
读取速度，GB/s

13.2 17.4
写入速度，GB/s

9.3 14.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2285 3557

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston HX318C10FK/4 4GB

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Kingston 9965669-005.A01G 16GB

Samsung M393B1G70BH0-CK0 8GB

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Corsair CMT32GX4M2Z3600C18 16GB

Corsair CMT32GX4M2Z3600C18 16GB

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V-GEN D4S8GL30A8TS5 8GB