Ramaxel Technology RMR5040ED58E9W1600 4GB vs G Skill Intl F4-3600C18-32GTRS 32GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

G Skill Intl F4-3600C18-32GTRS 32GB

需要考虑的原因
G Skill Intl F4-3600C18-32GTRS 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

17.7 13.2

测试中的平均数值
更快的写入速度，GB/s

15.3 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-3600C18-32GTRS 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

13.2 17.7
写入速度，GB/s

9.3 15.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2285 3713

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix DDR2 800 2G 2GB

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A-DATA Technology AM1P26KC8T1-BAAS 8GB

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Samsung M395T5160QZ4-CE66 2GB

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Avant Technology J641GU48J5213NG 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Samsung M471B5173EB0-YK0 4GB

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Kingston HP26D4U9S8ME-8X 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Micron Technology 16ATF4G64HZ-3G2B2 32GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Corsair CMD64GX4M4B3000C15 16GB

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Samsung M393B5170FH0-CK0 4GB

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Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB