Ramaxel Technology RMR5040ED58E9W1600 4GB vs Kingston X0N6VG-HYD2 16GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Kingston X0N6VG-HYD2 16GB

需要考虑的原因
Kingston X0N6VG-HYD2 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 43

左右 -43% 更低的延时
更快的读取速度，GB/s

17.3 13.2

测试中的平均数值
更快的写入速度，GB/s

16.1 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Kingston X0N6VG-HYD2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 30
读取速度，GB/s

13.2 17.3
写入速度，GB/s

9.3 16.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2285 3637

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMT128GX4M4C3200C16 32GB

Corsair CMT128GX4M4C3200C16 32GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-4400C17-8GVK 8GB

G Skill Intl F4-4400C17-8GVK 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Essencore Limited IM4AGU88A30-FGGHMB 16GB

Essencore Limited IM4AGU88A30-FGGHMB 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

G Skill Intl F4-2800C15-4GVR 4GB

G Skill Intl F4-2800C15-4GVR 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Crucial Technology BLS8G4D26BFSEK.8FBR 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Micron Technology 16ATF2G64AZ-3G2J1 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Transcend Information TS2GLH64V4B 16GB

Transcend Information TS2GLH64V4B 16GB