Ramaxel Technology RMR5040ED58E9W1600 4GB vs Smart Modular SMS4WEC3C0K0446SCG 4GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

Smart Modular SMS4WEC3C0K0446SCG 4GB

需要考虑的原因
Smart Modular SMS4WEC3C0K0446SCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更快的读取速度，GB/s

16 13.2

测试中的平均数值
更快的写入速度，GB/s

12.7 9.3

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

13.2 16.0
写入速度，GB/s

9.3 12.7
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2285 2353

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T2863QZ4-CF76 1GB

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Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMD32GX4M4B3000C15 8GB

Corsair CMD32GX4M4B3000C15 8GB

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Samsung M378B5673EH1-CF8 2GB

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