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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M378A5143DB0-CPB 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Samsung M378A5143DB0-CPB 4GB

总分
star star star star star
Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

总分
star star star star star
Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异 规格 评论

差异

Ramaxel Technology RMSA3260NA78HAF-2666 8GB 需要考虑的原因
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Samsung M378A5143DB0-CPB 4GB 需要考虑的原因
Samsung M378A5143DB0-CPB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 42
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M378A5143DB0-CPB 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 36
  • 读取速度，GB/s
    13.3 left arrow 14.4
  • 写入速度，GB/s
    7.8 left arrow 10.6
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 2490

Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M378A5143DB0-CPB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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