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Ramaxel Technology RMT3020EC58E9F1333 4GB
Apacer Technology 78.CAGMR.40C0B 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Apacer Technology 78.CAGMR.40C0B 8GB

总分
star star star star star
Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分
star star star star star
Apacer Technology 78.CAGMR.40C0B 8GB

Apacer Technology 78.CAGMR.40C0B 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB 需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 73
    左右 60% 更低的延时
Apacer Technology 78.CAGMR.40C0B 8GB 需要考虑的原因
Apacer Technology 78.CAGMR.40C0B 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 9
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.9 left arrow 5.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Apacer Technology 78.CAGMR.40C0B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 73
  • 读取速度，GB/s
    9.0 left arrow 14.7
  • 写入速度，GB/s
    5.7 left arrow 7.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 1865

Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Apacer Technology 78.CAGMR.40C0B 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
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Apacer Technology 78.CAGMR.40C0B 8GB
Apacer Technology 78.CAGMR.40C0B 8GB
内存RAM
Crucial Technology CT8G4SFRA266.M8FRS 8GB
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内存RAM
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Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
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Kingston HX426C16FB2/8-SP 8GB
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内存RAM
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内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
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Kingston 9965684-013.A00G 8GB
Kingston 9965684-013.A00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF2G64HZ-3G2B2 16GB
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内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM