Ramaxel Technology RMT3020EC58E9F1333 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

总分

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

差异规格评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB

需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 31

左右 6% 更低的延时

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

报告一个错误

更快的读取速度，GB/s

16.9 9

测试中的平均数值
更快的写入速度，GB/s

15.2 5.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3020EC58E9F1333 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 31
读取速度，GB/s

9.0 16.9
写入速度，GB/s

5.7 15.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1274 3650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S13C9G 2GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB