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Ramaxel Technology RMT3020EC58E9F1333 4GB
Corsair CMK8GX4M2B3600C18 4GB
比较
Ramaxel Technology RMT3020EC58E9F1333 4GB vs Corsair CMK8GX4M2B3600C18 4GB
总分
Ramaxel Technology RMT3020EC58E9F1333 4GB
总分
Corsair CMK8GX4M2B3600C18 4GB
差异
规格
评论
差异
需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
需要考虑的原因
Corsair CMK8GX4M2B3600C18 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 -21% 更低的延时
更快的读取速度,GB/s
20
9
测试中的平均数值
更快的写入速度,GB/s
15.7
5.7
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Corsair CMK8GX4M2B3600C18 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
24
读取速度,GB/s
9.0
20.0
写入速度,GB/s
5.7
15.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1274
3561
Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较
Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK8GX4M2B3600C18 4GB RAM的比较
Smart Modular SH564128FH8NZQNSCG 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F4-4000C14-16GTZR 16GB
Heoriady HX2666CX15D4/4G 4GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CM4X16GC3000C15D4 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905624-023.A00G 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 8ATF1G64AZ-2G3A1 8GB
Unifosa Corporation GU502203EP0201 1GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2800C15-16GRKD 16GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
ASint Technology SSA302G08-EGN1C 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 8ATF1G64AZ-2G3A141 8GB
报告一个错误
×
Bug description
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