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Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB vs Micron Technology 8ATF1G64AZ-2G1A1 8GB

总分
star star star star star
Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G1A1 8GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3020EC58E9F1333 4GB 需要考虑的原因
Ramaxel Technology RMT3020EC58E9F1333 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 33
    左右 12% 更低的延时
Micron Technology 8ATF1G64AZ-2G1A1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1A1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.2 left arrow 9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 5.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 33
  • 读取速度，GB/s
    9.0 left arrow 15.2
  • 写入速度，GB/s
    5.7 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 2774

Ramaxel Technology RMT3020EC58E9F1333 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Micron Technology 8ATF1G64AZ-2G1A1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M395T2863QZ4-CF76 1GB
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Corsair CMK16GX4M2F4500C19 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Kingston 9965525-018.A00LF 4GB
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Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
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内存RAM
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Corsair CMD16GX3M2A1866C9 8GB
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Kingston XCCT36-MIE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT32GX4M2D3600C18 16GB
Corsair CMT32GX4M2D3600C18 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
G Skill Intl F4-3200C14-8GTZKO 8GB
内存RAM