Ramaxel Technology RMT3160ED58E9W1600 4GB vs Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

总分

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

差异规格评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB

报告一个错误

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 40

左右 -90% 更低的延时
更快的读取速度，GB/s

17.7 12.3

测试中的平均数值
更快的写入速度，GB/s

13.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3160ED58E9W1600 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 21
读取速度，GB/s

12.3 17.7
写入速度，GB/s

7.8 13.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1806 2822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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G Skill Intl F4-4000C18-32GTZN 32GB

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Ramaxel Technology RMR5030MM58E8F1600 2GB

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Kingston KHX2133C11D3/4GX 4GB

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Corsair CMWX8GD3600C18W4 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFS832A.M8FR 8GB

Crucial Technology CT8G4DFS832A.M8FR 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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A-DATA Technology AO1P24HC8T1-BQXS 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB