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Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C16-16GRS 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB vs G Skill Intl F4-3200C16-16GRS 16GB

总分
star star star star star
Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分
star star star star star
G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

差异 规格 评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB
报告一个错误
G Skill Intl F4-3200C16-16GRS 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 40
    左右 -111% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C16-16GRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 19
  • 读取速度，GB/s
    12.3 left arrow 20.9
  • 写入速度，GB/s
    7.8 left arrow 15.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1806 left arrow 3801

Ramaxel Technology RMT3160ED58E9W1600 4GB RAM的比较

AMD R538G1601S2LS 8GB
Kingston 9905678-023.A00G 8GB

G Skill Intl F4-3200C16-16GRS 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C16-16GRS 16GB
G Skill Intl F4-3200C16-16GRS 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMD32GX4M4B3600C16 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-2800C16-8GVR 8GB
G Skill Intl F4-2800C16-8GVR 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston CBD26D4U9D8ME-16 16GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston ACR26D4U9D8ME-16 16GB
Kingston ACR26D4U9D8ME-16 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Transcend Information AQD-SD4U16GN21-SE 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
内存RAM