Ramaxel Technology RMT3160ED58E9W1600 4GB vs Patriot Memory (PDP Systems) 4400 C19 Series 8GB

总分

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

差异规格评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB

报告一个错误

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4400 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更快的读取速度，GB/s

19.5 12.3

测试中的平均数值
更快的写入速度，GB/s

17.8 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3160ED58E9W1600 4GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

12.3 19.5
写入速度，GB/s

7.8 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1806 3910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS824A.M8FE 8GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Mushkin 99[2/7/4]189F 4GB

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SK Hynix HMA451R7AFR8N-TF 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

Team Group Inc. TEAMGROUP-UD4-2133 8GB

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Kingston 9905678-012.A00G 8GB

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A-DATA Technology DDR3 1600 4GB

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