Ramaxel Technology RMT3170EB68F9W1600 4GB vs G Skill Intl F4-3600C16-16GTRS 16GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

G Skill Intl F4-3600C16-16GTRS 16GB

需要考虑的原因
G Skill Intl F4-3600C16-16GTRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

18 11.4

测试中的平均数值
更快的写入速度，GB/s

16.2 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-3600C16-16GTRS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

11.4 18.0
写入速度，GB/s

7.7 16.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1823 3933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Micron Technology 8ATF1G64HZ-2G6E3 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Gloway International Co. Ltd. TYA4U2666D19321C 32GB

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SK Hynix HMT125U6TFR8C-H9 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kllisre M471A3243BB0-CP50 16GB

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Kingston 9965662-002.A01G 16GB

Kingston 9965662-002.A01G 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Corsair CMK16GX4M1A2666C16 16GB

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Crucial Technology CT102464BA160B.M16 8GB

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Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB