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Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905678-156.A00G 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Kingston 9905678-156.A00G 8GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Kingston 9905678-156.A00G 8GB

Kingston 9905678-156.A00G 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Kingston 9905678-156.A00G 8GB 需要考虑的原因
Kingston 9905678-156.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 43
    左右 -72% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905678-156.A00G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 25
  • 读取速度，GB/s
    11.4 left arrow 15.1
  • 写入速度，GB/s
    7.7 left arrow 9.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 2516

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Kingston 9905678-156.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905678-156.A00G 8GB
Kingston 9905678-156.A00G 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMR16GX4M2C3200C16 8GB
Corsair CMR16GX4M2C3200C16 8GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
Wilk Elektronik S.A. GR2666D464L19/16G 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMD16GX4M4B3333C16 4GB
Corsair CMD16GX4M4B3333C16 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited KD48GU88C-26N190A 8GB
Essencore Limited KD48GU88C-26N190A 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
ISD Technology Limited KD48GU880-32A160X 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
AMD R744G2400U1S-UO 4GB
AMD R744G2400U1S-UO 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMW32GX4M4Z3200C16 8GB
Corsair CMW32GX4M4Z3200C16 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
内存RAM