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Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905702-204.A00G 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Kingston 9905702-204.A00G 8GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Kingston 9905702-204.A00G 8GB

Kingston 9905702-204.A00G 8GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Kingston 9905702-204.A00G 8GB 需要考虑的原因
Kingston 9905702-204.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 43
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905702-204.A00G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 31
  • 读取速度，GB/s
    11.4 left arrow 16.2
  • 写入速度，GB/s
    7.7 left arrow 12.1
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 3084

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Kingston 9905702-204.A00G 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
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Kingston 9905702-204.A00G 8GB
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内存RAM
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内存RAM
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内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
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内存RAM
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内存RAM
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Kingston 9965525-018.A00LF 4GB
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内存RAM