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Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston XN205T-MIE2 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Kingston XN205T-MIE2 16GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Kingston XN205T-MIE2 16GB

Kingston XN205T-MIE2 16GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Kingston XN205T-MIE2 16GB 需要考虑的原因
Kingston XN205T-MIE2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 43
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston XN205T-MIE2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 29
  • 读取速度，GB/s
    11.4 left arrow 17.2
  • 写入速度，GB/s
    7.7 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 3698

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Kingston XN205T-MIE2 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M3 93T5750CZA-CE6 2GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Corsair CM4X8GE2400C15K4 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Crucial Technology CT4G4DFS8213.C8FHP 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
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Samsung M391A2K43BB1-CTD 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston XN205T-MIE2 16GB
Kingston XN205T-MIE2 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
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Corsair CMK16GX4M2L3200C16 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston MSI24D4U7S8MB-8 8GB
Kingston MSI24D4U7S8MB-8 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-4000C19-8GTZKW 8GB
G Skill Intl F4-4000C19-8GTZKW 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.CAGR9.40C0B 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SpecTek Incorporated 16G2666CL19 16GB
SpecTek Incorporated 16G2666CL19 16GB
内存RAM