Ramaxel Technology RMT3170EB68F9W1600 4GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 54

左右 20% 更低的延时
更快的读取速度，GB/s

11.4 9.3

测试中的平均数值
更快的写入速度，GB/s

7.7 7.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 54
读取速度，GB/s

11.4 9.3
写入速度，GB/s

7.7 7.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1823 1904

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4B16G2L2666A18K2 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CM4X8GE2400C15K4 8GB

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Kingston KVR533D2N4 512MB

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Apacer Technology GD2.1527WT.001 8GB

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Corsair CMD16GX3M2A1866C9 8GB

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Crucial Technology BLS4G4D240FSA.8FARG 4GB

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G Skill Intl F4-3200C14-16GVR 16GB

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Protocol Engines Kingrock 800 2GB 2GB

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AMD AE34G1601U1 4GB

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G Skill Intl F4-4133C19-8GTZKWC 8GB

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Kingston HP698651-154-MCN 8GB

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Samsung M378B5173BH0-CH9 4GB

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