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Ramaxel Technology RMT3170EB68F9W1600 4GB
Mushkin MRX4U300GJJM16G 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB vs Mushkin MRX4U300GJJM16G 16GB

总分
star star star star star
Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分
star star star star star
Mushkin MRX4U300GJJM16G 16GB

Mushkin MRX4U300GJJM16G 16GB

差异 规格 评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB
报告一个错误
Mushkin MRX4U300GJJM16G 16GB 需要考虑的原因
Mushkin MRX4U300GJJM16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 43
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.8 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3170EB68F9W1600 4GB
Mushkin MRX4U300GJJM16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 28
  • 读取速度，GB/s
    11.4 left arrow 19.7
  • 写入速度，GB/s
    7.7 left arrow 16.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1823 left arrow 3927

Ramaxel Technology RMT3170EB68F9W1600 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston HP26D4U6D8ME-16X 16GB

Mushkin MRX4U300GJJM16G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Apacer Technology 78.DAGQ7.40B0B 16GB
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内存RAM
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内存RAM
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内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
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内存RAM
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G Skill Intl F4-3600C17-16GTZSW 16GB
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