Ramaxel Technology RMT3170EB68F9W1600 4GB vs Patriot Memory (PDP Systems) 2400 C16 Series 16GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

需要考虑的原因
Patriot Memory (PDP Systems) 2400 C16 Series 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 43

左右 -39% 更低的延时
更快的读取速度，GB/s

15.6 11.4

测试中的平均数值
更快的写入速度，GB/s

10.6 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 31
读取速度，GB/s

11.4 15.6
写入速度，GB/s

7.7 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1823 2837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1K70QB0-CK0 8GB

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Samsung M386A8K40BMB-CPB 64GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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Kingston 9965525-155.A00LF 8GB

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A-DATA Technology AO1E34RCTV2-BZWS 32GB

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Crucial Technology BLS16G4D26BFSC.16FD 16GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB