Ramaxel Technology RMT3170EB68F9W1600 4GB vs Teikon TMA81GS6AFR8N-UHSC 8GB

总分

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

总分

Teikon TMA81GS6AFR8N-UHSC 8GB

Teikon TMA81GS6AFR8N-UHSC 8GB

差异规格评论

差异

Ramaxel Technology RMT3170EB68F9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3170EB68F9W1600 4GB

报告一个错误

Teikon TMA81GS6AFR8N-UHSC 8GB

需要考虑的原因
Teikon TMA81GS6AFR8N-UHSC 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 -16% 更低的延时
更快的读取速度，GB/s

13.5 11.4

测试中的平均数值
更快的写入速度，GB/s

8.5 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3170EB68F9W1600 4GB

Teikon TMA81GS6AFR8N-UHSC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 37
读取速度，GB/s

11.4 13.5
写入速度，GB/s

7.7 8.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1823 2026

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Teikon TMA81GS6AFR8N-UHSC 8GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9905624-045.A00G 8GB

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Kingston 9905471-006.A01LF 4GB

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Samsung M393B5170FH0-CH9 4GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

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Samsung M471B5673FH0-CH9 2GB

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Micron Technology 16ATF2G64HZ-2G6H1 16GB

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