Ramos Technology EWB8GB681CA3-16IC 8GB vs A-DATA Technology 11137401 8GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

A-DATA Technology 11137401 8GB

A-DATA Technology 11137401 8GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 38% 更低的延时
更快的读取速度，GB/s

15.3 15.1

测试中的平均数值
更快的写入速度，GB/s

9.8 7.3

测试中的平均数值

A-DATA Technology 11137401 8GB

需要考虑的原因
A-DATA Technology 11137401 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

A-DATA Technology 11137401 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 40
读取速度，GB/s

15.3 15.1
写入速度，GB/s

9.8 7.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2646 1921

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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A-DATA Technology 11137401 8GB

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Samsung M393B2G70BH0-YK0 16GB

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Corsair CMK64GX4M8X4133C19 8GB

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Kingston 9905403-011.A03LF 2GB

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Crucial Technology CT102464BD160B.M16 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT8G4DFD8213.C16FDR2 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Kingston 99U5428-063.A00LF 8GB

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A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CM4X4GF2133C15S2 4GB

Corsair CM4X4GF2133C15S2 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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G Skill Intl F4-3600C17-8GTZKW 8GB

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Kingston ACR256X64D3S1333C9 2GB

Corsair CMSX4GX4M1A2400C16 4GB

Corsair CMSX4GX4M1A2400C16 4GB