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Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3333C16-16GTZ 16GB
比较
Ramos Technology EWB8GB681CA3-16IC 8GB vs G Skill Intl F4-3333C16-16GTZ 16GB
总分
Ramos Technology EWB8GB681CA3-16IC 8GB
总分
G Skill Intl F4-3333C16-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3333C16-16GTZ 16GB
报告一个错误
更快的读取速度,GB/s
15.8
15.3
测试中的平均数值
更快的写入速度,GB/s
11.8
9.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3333C16-16GTZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
25
读取速度,GB/s
15.3
15.8
写入速度,GB/s
9.8
11.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2646
3081
Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
G Skill Intl F4-3333C16-16GTZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
DSL Memory D4SS12082SH21A-A 8GB
Kingston 9905471-002.A00LF 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C14-16GVR 16GB
Kingston 99U5474-038.A00LF 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C16-32GTZR 32GB
AMD R538G1601U2S 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston KHX2400C12D4/8GX 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Transcend Information JM3200HLB-16GK 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
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Bug description
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