Ramos Technology EWB8GB681CA3-16IC 8GB vs Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

总分

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

总分

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

差异规格评论

差异

Ramos Technology EWB8GB681CA3-16IC 8GB

需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 7% 更低的延时

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

报告一个错误

更快的读取速度，GB/s

17.3 15.3

测试中的平均数值
更快的写入速度，GB/s

14.6 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramos Technology EWB8GB681CA3-16IC 8GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 27
读取速度，GB/s

15.3 17.3
写入速度，GB/s

9.8 14.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2646 3460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664AA800.M16FG 2GB

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EVGA 8GX-D4-3200-MR 8GB

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A-DATA Technology DDR2 800G 2GB

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Crucial Technology BLS16G4D26BFSB.16FD 16GB

Kingston ACR256X64D3S1333C9 2GB

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Transcend Information TS2GLH64V6B 16GB

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ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N

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