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Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
比较
Ramos Technology EWB8GB681CA3-16IC 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
总分
Ramos Technology EWB8GB681CA3-16IC 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 4% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
更快的读取速度,GB/s
16.8
15.3
测试中的平均数值
更快的写入速度,GB/s
13.5
9.8
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
26
读取速度,GB/s
15.3
16.8
写入速度,GB/s
9.8
13.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2646
2880
Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-3466C16-16GTZR 16GB
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Team Group Inc. TEAMGROUP-D4-3733 8GB
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Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Samsung M393B5270CH0-CH9 4GB
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G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK16GX4M2Z3200C16 8GB
AMD R5S38G1601U2S 8GB
Kingston XW21KG-MIE-NX 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK128GX4M8Z2933C16 16GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-3466C16-16GTZ 16GB
Kingston 9905403-174.A00LF 2GB
Corsair CMU32GX4M2C3200C16 16GB
报告一个错误
×
Bug description
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