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Ramos Technology EWB8GB681CA3-16IC 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
比较
Ramos Technology EWB8GB681CA3-16IC 8GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB
总分
Ramos Technology EWB8GB681CA3-16IC 8GB
总分
InnoDisk Corporation M4S0-4GSSNCIK 4GB
差异
规格
评论
差异
需要考虑的原因
Ramos Technology EWB8GB681CA3-16IC 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
85
左右 71% 更低的延时
更快的读取速度,GB/s
15.3
11.3
测试中的平均数值
更快的写入速度,GB/s
9.8
6.0
测试中的平均数值
需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCIK 4GB
报告一个错误
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Ramos Technology EWB8GB681CA3-16IC 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
85
读取速度,GB/s
15.3
11.3
写入速度,GB/s
9.8
6.0
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2646
1118
Ramos Technology EWB8GB681CA3-16IC 8GB RAM的比较
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EEB8GB681CAE-16IC 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD22G6672 2GB
Kingston 9905712-008.A00G 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMK16GX4M4B3200C15 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Kingston 99U5584-017.A00LF 4GB
Micron Technology 9905625-004.A03LF 8GB
takeMS International AG TMS2GB264D082-805G 2GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2800C16-8GVR 8GB
Corsair CML8GX3M2A1866C9 4GB
Avant Technology W642GU42J5213N 16GB
Samsung M393B1K70CH0-CH9 8GB
A-DATA Technology DDR4 2400 16GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2666C19-8GVK 8GB
Unifosa Corporation HU564404EP0200 4GB
G Skill Intl F4-3600C19-8GSXK 8GB
Corsair CML16GX3M2A1600C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB
报告一个错误
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Bug description
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