Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-2400C15-16GTZRX 16GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 18% 更低的延时

G Skill Intl F4-2400C15-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-2400C15-16GTZRX 16GB

报告一个错误

更快的读取速度，GB/s

15.8 11.6

测试中的平均数值
更快的写入速度，GB/s

9.4 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-2400C15-16GTZRX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 28
读取速度，GB/s

11.6 15.8
写入速度，GB/s

5.6 9.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 2510

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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ASint Technology SSA302G08-EGN1C 4GB

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Micron Technology 4ATF51264HZ-2G3E1 4GB

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Corsair CMK32GX4M2A2666C16 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Kingston KHX2666C15S4/8G 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

G Skill Intl F4-2400C16-4GFX 4GB

G Skill Intl F4-2400C16-4GFX 4GB

A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

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G Skill Intl F4-3600C17-16GTZSW 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMW64GX4M2D3000C16 32GB

Corsair CMW64GX4M2D3000C16 32GB