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Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-2800C15-16GRKD 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-2800C15-16GRKD 16GB

总分
star star star star star
Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分
star star star star star
G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

差异 规格 评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB 需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 18% 更低的延时
G Skill Intl F4-2800C15-16GRKD 16GB 需要考虑的原因
G Skill Intl F4-2800C15-16GRKD 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.1 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 5.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-2800C15-16GRKD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 28
  • 读取速度，GB/s
    11.6 left arrow 14.1
  • 写入速度，GB/s
    5.6 left arrow 10.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1751 left arrow 2931

Ramos Technology RMB4GB58BCA3-13HC 4GB RAM的比较

Ramos Technology RMB4GB584CA3-13HC 4GB
takeMS International AG TMS4GB364E081139EM 4GB

G Skill Intl F4-2800C15-16GRKD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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内存RAM
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内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
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G Skill Intl F4-2800C15-16GRKD 16GB
G Skill Intl F4-2800C15-16GRKD 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
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内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
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内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
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Panram International Corporation W4N2666PS-16G 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
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Micron Technology 8ATF1G64HZ-2G3A1 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
Crucial Technology CT8G4SFD824A.C16FADP 8GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
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Kingston KHX2666C15D4/8G 8GB
Kingston KHX2666C15D4/8G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMD16GX4M2B3600C18 8GB
Corsair CMD16GX4M2B3600C18 8GB
内存RAM