Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-4266C17-16GTZRB 16GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

G Skill Intl F4-4266C17-16GTZRB 16GB

需要考虑的原因
G Skill Intl F4-4266C17-16GTZRB 16GB

报告一个错误

更快的读取速度，GB/s

22.4 11.6

测试中的平均数值
更快的写入速度，GB/s

20.1 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-4266C17-16GTZRB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 23
读取速度，GB/s

11.6 22.4
写入速度，GB/s

5.6 20.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 4421

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW8GX4M1D3000C16 8GB

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Samsung M393B5270CH0-CH9 4GB

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Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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G Skill Intl F4-3600C16-8GTZKK 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Crucial Technology BLS8G4D32AESTK.M8FE 8GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

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Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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G Skill Intl F4-2400C16-8GFX 8GB

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SpecTek Incorporated ?????????????????? 2GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3200

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Avant Technology F6451U64F9333G 4GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB