Ramos Technology RMB4GB58BCA3-13HC 4GB vs Micron Technology 16ATF2G64HZ-2G6E1 16GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 37

左右 38% 更低的延时

Micron Technology 16ATF2G64HZ-2G6E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6E1 16GB

报告一个错误

更快的读取速度，GB/s

14.7 11.6

测试中的平均数值
更快的写入速度，GB/s

11.2 5.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 37
读取速度，GB/s

11.6 14.7
写入速度，GB/s

5.6 11.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1751 2698

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kllisre D4 8G 8GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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G Skill Intl F4-4000C18-32GTZR 32GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB

Crucial Technology BLS8G4S240FSDK.8FD 8GB