Ramos Technology RMB4GB58BCA3-13HC 4GB vs SK Hynix GKE160UD102408-2400 16GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

SK Hynix GKE160UD102408-2400 16GB

SK Hynix GKE160UD102408-2400 16GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 71

左右 68% 更低的延时

SK Hynix GKE160UD102408-2400 16GB

需要考虑的原因
SK Hynix GKE160UD102408-2400 16GB

报告一个错误

更快的读取速度，GB/s

15.5 11.6

测试中的平均数值
更快的写入速度，GB/s

8.9 5.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

SK Hynix GKE160UD102408-2400 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 71
读取速度，GB/s

11.6 15.5
写入速度，GB/s

5.6 8.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1751 1986

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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SK Hynix GKE160UD102408-2400 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-3000C16-8GISB 8GB

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SK Hynix HMA82GU6DJR8N-VK 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Apacer Technology 78.CAGP7.4020B 8GB

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Kingston 9905403-174.A00LF 2GB

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Crucial Technology CT16G4SFD8266.C16FE 16GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingston 9965516-049.A00LF 8GB

Kingston 9965516-049.A00LF 8GB

G Skill Intl F4-3400C16-8GTZSW 8GB

G Skill Intl F4-3400C16-8GTZSW 8GB

Kingston 9905458-017.A01LF 4GB

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Avant Technology F641GU67F9333G 8GB

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Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB